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Saturday, May 16, 2020 | History

2 edition of Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors found in the catalog.

Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors

Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors

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Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC], [Springfield, Va .
Written in English

    Subjects:
  • Gas detectors.,
  • Schottky diodes.,
  • Hydrocarbons.,
  • Hydrogen.,
  • Palladium.,
  • Silicon carbides.,
  • Heating.

  • Edition Notes

    StatementLiang-Yu Chen ... [et al.].
    SeriesNASA technical memorandum -- 107255.
    ContributionsChen, Liang-Yu., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15496498M


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Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors Download PDF EPUB FB2

ELECTRONIC AND INTERFACIAL PROPERTIES OF Pd/6H-SiC SCHOTTKY DIODE GAS SENSORS Liang-Yu Chen,_Gary W. Hunter, Philip G. Neudeek, Gaurav Bansal, Jeremy B.

Petit (NYMA), and Dak Knight (Cortez III) NASA Lewis Research Center MS Cleveland, OH Phone: () Fax: () email: [email protected], gov Chung-Chiun Liu and. Additional Physical Format: Online version: Chen, Liang Yu. Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors.

Cleveland, Ohio: National Aeronautics and Space Administration, Lewis Research Center, June Get this from a library. Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors. [Liang Yu Chen; Lewis Research Center,; United States.

National Aeronautics and Space Administration,]. The surface and interface properties of Pd Cr /SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS).

At room temperature the alloy reacted with SiC and formed Pd x Si only in a very narrow interfacial by: Diffusion of hydrogen through the Pt layer is likely not the limiting factor in the recovery of the diode properties, J.B.

Petit, D. Knight, C.-C. Liu, Q.H. Wu, Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors, Proceedings of the Third International High Temperature Electronics Conference, Albuquerque, NM, Cited by: Buy Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors (SuDoc NAS ) by NASA (ISBN:) from Amazon's Book Store.

Everyday low prices and free delivery on Author: NASA. Gas Testing The electrical properties of a Schottky diode gas sensor have been characterized before and after annealing and the results are discussed in more detail in reference 3. An as-deposited diode was fLrst operated at °C to establish stable electronic properties.

Semiconductor gas sensors Published: () Solid state gas sensors-- Industrial application Published: () IEEE Sensors proceedings: IEEE Sensors Conference, Limerick, Ireland, 28. Chemical gas sensors for aeronautic and space applications / by: Hunter, G.

Published: () Gas pressure sintering of °-Sialon with Z=3 Published: () Reacting multi-species gas capability for USM3D flow solver by: Frink, Neal T.

Published: (). Request PDF | Gas, Chemical and Biological Sensing with ZnO | This chapter discusses the gas, chemical, and biological sensing with zinc oxide (ZnO). It introduces the response characteristics of. Chen L, Hunter GW, and Neudeck PG () Comparison of Interfacial and Electronic Properties of Annealed Pd/SiC and Pd/SiO2/SiC Schottky Diode Sensors.

Vacuum Sci. Technol. A, vol. 15, pp. – CrossRef Google ScholarCited by: Request PDF | Case Studies in Chemical Sensor Development | The need for chemical sensor technology has increased in recent years generating the need.

In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power Cited by: Form Approved OMB NO.

REPORT DOCUMENTATION PAGE Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewino instructions search™ exist™ data sources,-T9 a"dJnalnta.'nin9 *• *"«neede* and completing and reviewing thl collection of information.

Pd /CeO2/ SiC Chemical Sensors. NASA Technical Reports Server (NTRS) Lu, Weijie; Collins, W. Eugene. The incorporation of nanostructured interfacial layers of CeO2 has.

Carbon-Nanotube Schottky Diodes. NASA Technical Reports Server (NTRS) Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter.

Schottky. of a SiC Schottky diode structure as a gas sensor depends on strict control of the metal-semiconductor interface that makes up the diode and determines its electrical properties [24].

One complicating factor in control of this interface is high temperature operation of these gas sensors. Full text of "DTIC ADA Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications, MRS Symposium Proceedings Held in San Francisco on April Volume " See other formats.

Amperometric gas sensors (AGSs) are best divided by the temperature at which they operate and can be represented by two well-known commercial gas sensors that include the ambient-temperature liquid electrolyte gas sensors used for medical and industrial hygiene applications and the hightemperature solid electrolyte O2 sensor used in automotive.

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